Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-04-19
2011-12-20
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S077000, C257S296000, C257S329000, C257SE27084, C257SE27098, C257SE27103, C257SE29262
Reexamination Certificate
active
08080837
ABSTRACT:
A memory device includes an array of memory cells and peripheral devices. At least some of the individual memory cells include carbonated portions that contain SiC. At least some of the peripheral devices do not include any carbonated portions. A transistor includes a first source/drain, a second source/drain, a channel including a carbonated portion of a semiconductive substrate that contains SiC between the first and second sources/drains and a gate operationally associated with opposing sides of the channel.
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Micro)n Technology, Inc.
Thomas Toniae
Wells St. John P.S.
Wilczewski Mary
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