Gate minimization threshold voltage of FET for synchronous...

Details Gate minimization threshold voltage of FET for synchronous... Gate minimization threshold voltage of FET for synchronous...

2009-10-26

2011-12-27

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000, C257S213000, C257SE27016, C323S266000

Reexamination Certificate

active

08084823

ABSTRACT:
A FET device for synchronous rectification of the present invention, a FET having no body diode, the characteristics have gate minimization threshold voltage equal or over load voltage, can be achieve FET turn on, and gate minimization threshold voltage under load voltage, can be achieve FET turn off.

REFERENCES:
patent: 6343023 (2002-01-01), Wunderlich
patent: 2007/0200346 (2007-08-01), Kanazawa et al.
patent: 2009/0261790 (2009-10-01), Arduini

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