STT-MRAM bit cell having a rectangular bottom electrode...

Details STT-MRAM bit cell having a rectangular bottom electrode... STT-MRAM bit cell having a rectangular bottom electrode...

2008-08-28

2011-12-27

Dinh, Son (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

08085581

ABSTRACT:
A Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) bit cell is provided. The STT-MRAM includes a rectangular bottom electrode (BE) plate, and a storage element on the rectangular bottom electrode (BE) plate. A difference between a width of the rectangular bottom electrode (BE) plate and a width of the storage element is equal to or greater than a predetermined minimum spacing requirement. A width of the bottom electrode (BE) plate is substantially equal to a width of an active layer or a width of a plurality of metal layers.

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International Search Report and Written Opinion—PCT/US2009/054756, International Search Authority—European Patent Office—Nov. 4, 2009.
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