Method of fabricating a deep trench insulated gate bipolar...

Details Method of fabricating a deep trench insulated gate bipolar... Method of fabricating a deep trench insulated gate bipolar...

2011-01-11

2011-12-13

Picardat, Kevin M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S329000, C257S331000

Reexamination Certificate

active

08076723

ABSTRACT:
In one embodiment, a method comprises forming an epitaxial layer over a substrate of an opposite conductivity type, the epitaxial layer being separated by a buffer layer having a doping concentration that is substantially constant in a vertical direction down to the buffer layer. A pair of spaced-apart trenches is formed in the epitaxial layer from a top surface of the epitaxial layer down at least into the buffer layer. A dielectric material is formed in the trenches over the first and second sidewall portions. Source/collector and body regions of are formed at the top of the epitaxial layer, the body region separating the source/collector region of the pillar from a drift region of the epitaxial layer that extends from the body region to the buffer layer. An insulated gate member is then formed in each of the trenches adjacent to and insulated from the body region.

REFERENCES:
patent: 6838346 (2005-01-01), Disney
patent: 7253042 (2007-08-01), Disney
patent: 7648879 (2010-01-01), Banerjee et al.
patent: 2002/0074585 (2002-06-01), Tsang et al.
patent: 2004/0063269 (2004-04-01), Kocon
patent: 2004/0097042 (2004-05-01), Hshieh et al.

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