Semiconductor strain gauge and the manufacturing method

Details Semiconductor strain gauge and the manufacturing method Semiconductor strain gauge and the manufacturing method

2009-11-12

2011-11-22

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

C257SE29324

Reexamination Certificate

active

08063457

ABSTRACT:
A high-density impurity diffused layer of an identical conduction type to the semiconductor substrate on which the impurity is doped higher in density than the semiconductor substrate around the diffuse resistance region is provided, one side of the electrodes is formed extending to the high-density impurity diffused layer and the diffused resistance region and the high-density impurity diffused layer are connected in a semiconductor strain gauge that is formed on the surface of the semiconductor substrate of a fixed conduction type and is provided with the diffused resistance region of opposite conduction type to the semiconductor substrate and is provided with electrodes on both ends of the diffused resistance region.

REFERENCES:
patent: 5231301 (1993-07-01), Peterson et al.

Affiliated with

Also associated with

Rating

Semiconductor strain gauge and the manufacturing method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor strain gauge and the manufacturing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor strain gauge and the manufacturing method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4310900