Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2010-04-05
2011-12-27
Hur, J. H. (Department: 2824)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S230030, C365S233500, C365S189040, C365S238500, C365S220000
Reexamination Certificate
active
08085574
ABSTRACT:
A nonvolatile ferroelectric memory immediately outputs data stored in a page buffer without performing a cell access operation when a page buffer is accessed. Since a block page address region and a column page address region are arranged in less significant bit region, and a row address region is arranged in more significant bit region, the cell operation is not performed in the access of the page address buffer, thereby improving reliability of the cell and reducing power consumption.
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Hur J. H.
Hynix / Semiconductor Inc.
Kilpatrick Townsend & Stockton LLP
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