Flip chip for electrical function test and manufacturing...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

C438S613000, C257S778000, C257S779000, C257S780000, C257SE23023, C257SE23021

Reexamination Certificate

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08048793

ABSTRACT:
Disclosed is a method for manufacturing a flip chip, in which a gold typically used in a flip chip manufacturing is adhered by conductive adhesives, wherein the method comprises steps of depositing a metal seed layer on a substrate; applying and patterning a photoresist or a dry film; forming a gold bump by electroplating; patterning the seed layer; forming an insulating layer on the seed layer and upper end of the gold bump; and patterning an insulating layer. Accordingly, it is possible to manufacture a flip chip, in which electrical function between bumps can be evaluated, with less cost.

REFERENCES:
patent: 5130275 (1992-07-01), Dion
patent: 7485967 (2009-02-01), Kameyama et al.
patent: 7723225 (2010-05-01), Lin et al.
patent: 2005/0277283 (2005-12-01), Lin et al.
patent: 2006/0019490 (2006-01-01), Chou et al.
patent: 2007/0275503 (2007-11-01), Lin et al.
patent: 1020060018621 (2006-03-01), None
Notice to File a Response in Korean Application No. 10-2007-0089905.

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