Semiconductor device having a fin transistor

Details Semiconductor device having a fin transistor Semiconductor device having a fin transistor

2010-02-02

2011-11-08

Landau, Matthew (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S365000, C257SE29264, C257SE21421, C438S283000

Reexamination Certificate

active

08053841

ABSTRACT:
A fin transistor includes fin active region, an isolation layer covering both sidewalls of a lower portion of the fin active region, a gate insulation layer disposed over a surface of the fin active region, and a gate electrode disposed over the gate insulation layer and the isolation layer, and having a work function ranging from approximately 4.4 eV to approximately 4.8 eV.

REFERENCES:
patent: 2004/0026765 (2004-02-01), Currie et al.
patent: 2006/0088967 (2006-04-01), Hsiao et al.
patent: 2007/0052037 (2007-03-01), Luan
patent: 1020050110081 (2005-11-01), None
patent: 1020060019470 (2006-03-01), None
patent: 1020060033232 (2006-04-01), None
Notice of Allowance dated May 30, 2008, for Korean application No. 10-2007-0026073, citing the above references.

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