Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2008-09-12

2011-11-15

Smoot, Stephen W (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29260, C257SE29201

Reexamination Certificate

active

08058684

ABSTRACT:
A semiconductor device according to the present invention includes: a semiconductor layer made of silicon; a trench formed by digging in from a top surface of the semiconductor layer; a gate insulating film formed on an inner wall surface of the trench and made of silicon oxide; a gate electrode embedded in the trench via the gate insulating film and made of a polysilicon doped with an impurity; and an oxidation-resistant metal film disposed on a top surface of the gate electrode and covering the top surface.

REFERENCES:
patent: 2002/0100934 (2002-08-01), Nakagawa et al.
patent: 2006/0273379 (2006-12-01), Bhalla et al.
patent: 2002-305305 (2002-10-01), None

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