Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2008-02-12

2011-12-13

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S335000, C257S336000, C257S337000, C257S338000, C257S339000, C257S077000, C257SE29255

Reexamination Certificate

active

08076736

ABSTRACT:
A semiconductor device according to the present invention comprises a silicon carbide semiconductor substrate (1) including a silicon carbide layer (2); a high-concentration impurity region (4) provided in the silicon carbide layer (2); an ohmic electrode (9) electrically connected with the high-concentration impurity region (4); a channel region electrically connected with the high-concentration impurity region; a gate insulating layer (14) provided on the channel region; and a gate electrode (7) provided on the gate insulating layer (14). The ohmic electrode (9) contains an alloy of titanium, silicon and carbon, and the gate electrode (7) contains titanium silicide.

REFERENCES:
patent: 4990994 (1991-02-01), Furukawa et al.
patent: 5939753 (1999-08-01), Ma et al.
patent: 2004/0183080 (2004-09-01), Kusumoto et al.
patent: 2005/0067661 (2005-03-01), Choi
patent: 2005/0118757 (2005-06-01), Cabral, Jr. et al.
patent: 2006/0205195 (2006-09-01), Malhan et al.
patent: 2007/0045631 (2007-03-01), Endo et al.
patent: 2008/0054246 (2008-03-01), Sato
patent: 62-71271 (1987-04-01), None
patent: 05-55569 (1993-03-01), None
patent: 07-99169 (1995-04-01), None
patent: 2000-200902 (2000-07-01), None
patent: 2002-16017 (2002-01-01), None
patent: 2002-75909 (2002-03-01), None
patent: 2003-243323 (2003-08-01), None
patent: 2005-277240 (2005-10-01), None
patent: 2006-261624 (2006-09-01), None
International Search Report for corresponding application No. PCT/JP2008/000202 completed Apr. 23, 2008.

Affiliated with

Also associated with

Rating

Semiconductor device and method for manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method for manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4304370