Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-09-14
2011-12-06
Nguyen, Dao H (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
Reexamination Certificate
active
08072012
ABSTRACT:
Tunnel field-effect transistors (TFETs) are regarded as successors of metal-oxide semiconductor field-effect transistors (MOSFETs), but silicon-based TFETs typically suffer from low on-currents, a drawback related to the large resistance of the tunnel barrier. To achieve higher on-currents an elongate monocrystalline nanostructure-based TFET with a heterostructure made of a different semiconducting material (e.g. germanium (Ge)) is used. An elongate monocrystalline nanostructure made of a different semiconducting material is introduced which acts as source (or alternatively drain) region of the TFET. The introduction of the heterosection is such that the lattice mismatch between silicon and germanium does not result in a highly defective interface. A dynamic power reduction as well as a static power reduction can result, compared to conventional MOSFET configurations. Multiple layers of logic can therefore be envisioned with these elongate monocrystalline nanostructure Si/Ge TFETs resulting in ultra-high on-chip transistor densities.
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Vandenberghe William G.
Verhulst Anne S.
IMEC
Katholieke Universiteit Leuven K.U. Leuven R&D
Knobbe Martens Olson & Bear LLP
Nguyen Dao H
Nguyen Tram H
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