Split-gate nonvolatile semiconductor memory device

Details Split-gate nonvolatile semiconductor memory device Split-gate nonvolatile semiconductor memory device

2009-02-10

2011-10-11

Tran, Tan N (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S315000, C257S320000, C257SE29300

Reexamination Certificate

active

08035155

ABSTRACT:
A nonvolatile semiconductor memory device includes a floating gate; an erasing gat; and a control gate. The floating gate is provided on a channel region of a semiconductor substrate through a first insulating layer. The erasing gate is provided on the floating gate through a second insulating layer. The control gate is provided beside the floating gate and the erasing gate through a third insulating layer. The floating gate is U-shaped.

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patent: 2006/0186460 (2006-08-01), Choi et al.
patent: 2006/0284242 (2006-12-01), Jo
patent: 2000-286348 (2000-10-01), None
patent: 2001-085543 (2001-03-01), None
patent: 2001-230330 (2001-08-01), None
patent: 2001-230330 (2001-08-01), None

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