Semiconductor device and the method of manufacturing the same

Details Semiconductor device and the method of manufacturing the same Semiconductor device and the method of manufacturing the same

2006-02-28

2011-11-08

Mandala, Victor A (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

In integrated circuit

C257S491000, C257S487000, C257SE29015, C257SE29060

Reexamination Certificate

active

08053859

ABSTRACT:
To provide a semiconductor device that exhibits a high breakdown voltage, excellent thermal properties, a high latch-up withstanding capability and low on-resistance. The semiconductor device according to the invention, which includes a buried insulator region5disposed between an n−-type drift layer3and a first n-type region7above n−-type drift layer3, facilitates limiting the emitter hole current, preventing latch-up from occurring, raising neither on-resistance nor on-voltage. The semiconductor device according to the invention, which includes a p-type region4disposed between the buried insulator region5and n−-type drift layer3, facilitates depleting n−-type drift layer3in the OFF-state of the device. The semiconductor device according to the invention, which includes a second n-type region6disposed between the first n-type region7and the n−-type drift layer3, facilitates dissipating the heat caused in the channel region or in the first n-type region7to a p+-type collector layer1a, which is a semiconductor substrate, via the second n-type region6, n−-type drift layer3and an n-type buffer layer2.

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Chinese Office Action dated Mar. 6, 2009, issued in corresponding Chinese Application No. 2006800069180. Partial English translation provided.
PCT International Search Report and Written Opinion issued in the corresponding PCT application No. PCT/JP2006/304215 mailed on Jun. 20, 2006.

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