Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-08-10
2011-12-27
Mitchell, James (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S253000, C257S225000
Reexamination Certificate
active
08084353
ABSTRACT:
Methods and apparatus for providing a memory array fabrication process that concurrently forms memory array elements and peripheral circuitry. The invention relates to a method for fabricating memory arrays using a process that concurrently forms memory array elements and peripheral circuitry and results in a reduction in pitch.
REFERENCES:
patent: 5328810 (1994-07-01), Lowrey et al.
patent: 6110837 (2000-08-01), Linliu et al.
patent: 6277727 (2001-08-01), Kuo et al.
patent: 6376294 (2002-04-01), Tzeng et al.
patent: 6395596 (2002-05-01), Chien et al.
patent: 6403417 (2002-06-01), Chien et al.
patent: 6416933 (2002-07-01), Singh et al.
patent: 6518125 (2003-02-01), Chang
patent: 6638441 (2003-10-01), Chang et al.
patent: 6734107 (2004-05-01), Lai et al.
patent: 6750150 (2004-06-01), Chung et al.
patent: 6774051 (2004-08-01), Chung et al.
patent: 6867116 (2005-03-01), Chung
patent: 6887627 (2005-05-01), Chung et al.
patent: 6893972 (2005-05-01), Rottstegge et al.
patent: 6946400 (2005-09-01), Chung
patent: 7183205 (2007-02-01), Hong
patent: 2003/0027420 (2003-02-01), Lai et al.
patent: 2003/0134478 (2003-07-01), Lai et al.
patent: 2005/0079722 (2005-04-01), Yu
patent: 2005/0272259 (2005-12-01), Hong
patent: 2006/0240361 (2006-10-01), Lee et al.
patent: 2007/0293041 (2007-12-01), Yang et al.
patent: 05-190811 (1993-07-01), None
patent: 06-151876 (1994-05-01), None
Haynes Beffel & Wolfeld LLP
Macronix International Co. Ltd.
Mitchell James
LandOfFree
Methods for pitch reduction formation does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods for pitch reduction formation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for pitch reduction formation will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4298878