Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-05-16
2011-10-04
Nguyen, Cuong Q (Department: 2811)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S128000
Reexamination Certificate
active
08030142
ABSTRACT:
A semiconductor device according to an embodiment of the present invention includes: a first region having patterns formed based on grid points as intersections of grid lines; and a second region including a plurality of layout cells an outer edge of which is defined by the grid points, the layout cells having patterns formed based on a wiring rule with patterns connected to patterns of the first region among the patterns being formed based on the grid points at a boundary with the first region.
REFERENCES:
patent: 6791128 (2004-09-01), Yamauchi
patent: 7271451 (2007-09-01), Liaw
patent: 2005-189683 (2005-07-01), None
McGinn IP Law Group PLLC
Nguyen Cuong Q
Renesas Electronics Corporation
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