Methods of forming a conductive transparent oxide film layer...

Details Methods of forming a conductive transparent oxide film layer... Methods of forming a conductive transparent oxide film layer...

2010-03-30

2011-11-08

Sarkar, Asok (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C136S256000, C136S260000, C136S264000, C257SE21159, C438S085000, C438S098000, C438S608000

Reexamination Certificate

active

08053350

ABSTRACT:
Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer on a substrate at a sputtering temperature from about 50° C. to about 250° C., and annealing the transparent conductive oxide layer at an anneal temperature of about 450° C. to about 650° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device.

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