Resistive memory and method

Details Resistive memory and method Resistive memory and method

2007-03-16

2011-11-22

Fourson, III, George (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21645, C438S153000, C438S154000, C438S188000, C438S202000, C438S203000

Reexamination Certificate

active

08063448

ABSTRACT:
A memory device includes a multi gate field effect transistor (MuGFET) having a fin with a contact area. A programmable memory element abuts the fin contact area.

REFERENCES:
patent: 6928022 (2005-08-01), Cho et al.
patent: 7023008 (2006-04-01), Happ
patent: 7133307 (2006-11-01), Baker
patent: 2002/0126524 (2002-09-01), Sugibayashi et al.
patent: 2005/0263801 (2005-12-01), Park et al.
patent: 2006002617 (2006-01-01), None

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