Static source plane in stram

Details Static source plane in stram Static source plane in stram

2010-11-18

2011-11-29

Luu, Pho M (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

08068359

ABSTRACT:
A memory array includes a plurality of magnetic tunnel junction cells arranged in a 2 by 2 array. Each magnetic tunnel junction cell is electrically coupled between a bit line and a source line and each magnetic tunnel junction cell electrically coupled to a transistor. Each magnetic tunnel junction cell is configured to switch between a high resistance state and a low resistance state by passing a write current passing though the magnetic tunnel junction cell. A first word line is electrically coupled to a gate of first set of two of the transistors and a second word line is electrically coupled to a gate of a second set of two of the transistors. The source line is a common source line for the plurality of magnetic tunnel junctions.

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