Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2003-08-22
2011-10-18
Matthews, Colleen (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE31003, C257SE27133
Reexamination Certificate
active
08039882
ABSTRACT:
Embodiments of the present invention provide a pixel cell for an image sensor that includes a photodiode, which provides high gain, low noise, and low dark current. The pixel cell includes a photodiode comprising layers of a first material and at least a second material in contact with one another. The photodiode generates charge in response to light and also amplifies the charge. The layers may be configured to promote impact ionization by a first carrier type and suppress impact ionization by a second carrier type. The pixel cell also includes a gate of a transistor adjacent to the photodiode and may include readout circuitry for reading out the charge generated and amplified by the photodiode.
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Dickstein & Shapiro LLP
Matthews Colleen
Micro)n Technology, Inc.
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