Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2009-08-04

2011-10-18

Sefer, A. (Department: 2893)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21584

Reexamination Certificate

active

08039390

ABSTRACT:
The method of manufacturing a semiconductor device according to the present invention includes: a groove forming step of forming a groove in an insulating layer made of an insulating material containing Si and O; an alloy film applying step of covering the side surface and the bottom surface of the groove with an alloy film made of an alloy material containing Cu and Mn by sputtering; a thinning step of reducing the thickness of a portion of the alloy film covering the bottom surface of the groove; a wire forming step of forming a Cu wire made of a metallic material mainly composed of Cu in the groove after the thinning step; and a barrier film forming step of forming a barrier film made of MnSiO between the Cu wire and the insulating layer by heat treatment.

REFERENCES:
patent: 5418187 (1995-05-01), Miyanaga et al.
patent: 6537904 (2003-03-01), Ishizuka
patent: 2005/0218519 (2005-10-01), Koike et al.
patent: 2008/0213998 (2008-09-01), Nagai et al.
patent: 2005-277390 (2005-10-01), None

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