Method of manufacturing silicon carbide semiconductor device

Details Method of manufacturing silicon carbide semiconductor device Method of manufacturing silicon carbide semiconductor device

Filed on

2007-08-13

Date issued

2011-10-25

Examiner

Stark, Jarrett (Department: 2823)

Patent Class

Semiconductor device manufacturing: process

SubClass

Coating with electrically or thermally conductive material

SubSubClass

Insulated gate formation

Other Related Categories

C438S268000, C438S270000, C257SE21061

Type

Reexamination Certificate

Status

active

Patent number

08043949

Description

ABSTRACT:
There is provided a method of manufacturing a silicon carbide semiconductor device including the steps of: in a semiconductor stacked substrate including a first conductivity type silicon carbide crystal substrate, a first conductivity type silicon carbide crystal layer, a second conductivity type silicon carbide crystal layer, and a first conductivity type semiconductor region, forming a trench extending through the first conductivity type semiconductor region and the second conductivity type silicon carbide crystal layer into the first conductivity type silicon carbide crystal layer defined as a bottom surface; forming a silicon film on at least a part of the trench; heating the semiconductor stacked substrate having the silicon film formed to a temperature that is not less than the melting temperature of the silicon film; removing the heated silicon film; forming a gate insulating film on a surface exposed after the silicon film is removed; and forming a gate electrode layer on a surface of the gate insulating film.

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