Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-11-25
2011-10-11
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27098
Reexamination Certificate
active
08035170
ABSTRACT:
A semiconductor device according to an embodiment of the invention includes: a semiconductor substrate; device regions formed on the semiconductor substrate, the device regions having a length direction in a predetermined direction; a plurality of transistors having gate electrodes, respectively, the gate electrodes extending in a direction approximately perpendicular to the predetermined direction, the plurality of transistors having a source/drain region and a channel region having a channel direction approximately parallel to the predetermined direction in the device region; a plurality of SRAM cells disposed in an array, each of the plurality of SRAM cells including the plurality of transistors; and a dummy region made of the substantially same material as that of the device regions, the dummy region being formed between the outermost device regions of the SRAM cells adjacent to each other in the direction approximately perpendicular to the predetermined direction, the dummy region having a length direction approximately parallel to the predetermined direction.
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H. Kawasaki, et al., “Embedded Bulk FinFET SRAM Cell Technology with Planar FET Peripheral Circuit forhp32 nm node and beyond”, 2006 Symposium on VLSI Technology Digest of Technical Papers, 2006, 2 pages.
U.S. Appl. No. 12/494,885, filed Jun. 30, 2009, Inaba.
Budd Paul
Jackson, Jr. Jerome
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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