Semiconductor device including SRAM

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257SE27098

Reexamination Certificate

active

08035170

ABSTRACT:
A semiconductor device according to an embodiment of the invention includes: a semiconductor substrate; device regions formed on the semiconductor substrate, the device regions having a length direction in a predetermined direction; a plurality of transistors having gate electrodes, respectively, the gate electrodes extending in a direction approximately perpendicular to the predetermined direction, the plurality of transistors having a source/drain region and a channel region having a channel direction approximately parallel to the predetermined direction in the device region; a plurality of SRAM cells disposed in an array, each of the plurality of SRAM cells including the plurality of transistors; and a dummy region made of the substantially same material as that of the device regions, the dummy region being formed between the outermost device regions of the SRAM cells adjacent to each other in the direction approximately perpendicular to the predetermined direction, the dummy region having a length direction approximately parallel to the predetermined direction.

REFERENCES:
patent: 7112858 (2006-09-01), Inaba et al.
patent: 7512017 (2009-03-01), Chang
patent: 7812373 (2010-10-01), Bauer et al.
patent: 2007/0132009 (2007-06-01), Takeuchi et al.
patent: 2007/0189060 (2007-08-01), Inaba
patent: 2007/0264762 (2007-11-01), Yeo et al.
patent: 2008/0179682 (2008-07-01), Bauer et al.
patent: 2008/0210981 (2008-09-01), Chang et al.
patent: WO 2005/036651 (2005-04-01), None
H. Kawasaki, et al., “Embedded Bulk FinFET SRAM Cell Technology with Planar FET Peripheral Circuit forhp32 nm node and beyond”, 2006 Symposium on VLSI Technology Digest of Technical Papers, 2006, 2 pages.
U.S. Appl. No. 12/494,885, filed Jun. 30, 2009, Inaba.

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