Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2010-08-10
2011-11-22
Sandvik, Benjamin (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S326000, C257SE27102, C257SE29300
Reexamination Certificate
active
08063432
ABSTRACT:
A semiconductor device includes a tunnel insulation film formed on a semiconductor substrate, a floating gate electrode formed on the tunnel insulation film, an inter-electrode insulation film formed on the floating gate electrode, a control gate electrode formed on the inter-electrode insulation film, a pair of oxide films which are formed between the tunnel insulation film and the floating gate electrode and are formed near lower end portions of a pair of side surfaces of the floating gate electrode, which are parallel in one of a channel width direction and a channel length direction, and a nitride film which is formed between the tunnel insulation film and the floating gate electrode and is formed between the pair of oxide films.
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Notice of Reasons for Rejection issued by the Japanese Patent Office mailed on Mar. 29, 2011, for Japanese Patent Application No. 2006-304364 and English language translation thereof.
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Kuo Wensing
Sandvik Benjamin
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