Semiconductor device

Details Semiconductor device Semiconductor device

2009-03-11

2011-10-04

Luu, Chuong A. (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S406000, C257S412000, C257S388000

Reexamination Certificate

active

08030717

ABSTRACT:
A disclosed semiconductor device includes a gate insulation film formed on a silicon substrate and a metal gate electrode formed in the gate insulation film, wherein the gate insulation film includes a first insulation film, a second insulation film that is formed on the first insulation film and has a greater dielectric constant than the first insulation film, and a third insulation film formed on the second insulation film.

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“Extended Abstracts” (The 55th Spring Meeting, 2008), No. 2, The Japan Society of Applied Physics and Related Societies, Mar. 27-30, 2008.
“Digest of Technical Papers”, 2008 Symposium on VLSI Technology, The IEEE Electron Devices Society and The Japan Society of Applied Physics, Jun. 17-19, 2008.
Japanese Office Action mailed Nov. 9, 2010 2010 with partial trans.

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