Substrate processing method and substrate processing apparatus

Details Substrate processing method and substrate processing apparatus Substrate processing method and substrate processing apparatus

2008-01-15

2011-10-11

Vinh, Lan (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S714000, C438S724000, C216S073000

Reexamination Certificate

active

08034720

ABSTRACT:
A substrate processing method that can remove a silicon nitride film without damaging a thermally-oxidized film. A substrate having at least a thermally-oxidized film and a silicon nitride film formed on the thermally-oxidized film is heated to a temperature of not less than 60° C. Then, hydrogen fluoride gas is supplied toward the substrate.

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patent: 2005/0074948 (2005-04-01), Ko et al.
patent: 05-041367 (1993-02-01), None
patent: 2001-345307 (2001-12-01), None
patent: 2003-264183 (2003-09-01), None
Office Action issued Jun. 1, 2011, in Japanese Patent Application No. 2007-021020 filed Apr. 13, 2007 (with English-language Translation).

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