Photoelectric conversion device and method of manufacturing...

Details Photoelectric conversion device and method of manufacturing... Photoelectric conversion device and method of manufacturing...

2009-09-09

2011-10-25

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S053000, C257S055000, C257S059000, C257S288000, C257S290000, C438S096000, C438S097000, C438S151000, C438S164000

Reexamination Certificate

active

08044445

ABSTRACT:
A photoelectric conversion device includes a thin film transistor that is placed on a substrate, a photodiode that is connected to a drain electrode of the thin film transistor and includes an upper electrode, a lower electrode and a photoelectric conversion layer placed between the upper and lower electrodes, a first interlayer insulating film that covers at least the upper electrode, a second interlayer insulating film that is placed in an upper layer of the first interlayer insulating film and covers the thin film transistor and the photodiode, and a line that is connected to the upper electrode through a contact hole disposed in the first interlayer insulating film and the second interlayer insulating film.

REFERENCES:
patent: 6236063 (2001-05-01), Yamazaki et al.
patent: 6753915 (2004-06-01), Mochizuki
patent: 2007/0113886 (2007-05-01), Arao et al.
patent: 2009/0026509 (2009-01-01), Hayashi et al.
patent: 2009/0152563 (2009-06-01), Hayashi et al.
patent: 2000-101920 (2000-04-01), None
patent: 2007-165865 (2007-06-01), None

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