Semiconductor device and method for producing the same

Details Semiconductor device and method for producing the same Semiconductor device and method for producing the same

2008-08-19

2011-11-22

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S344000, C257S347000, C257SE51005

Reexamination Certificate

active

08063437

ABSTRACT:
A semiconductor device includes: a first semiconductor region formed on a substrate and having an upper surface and a side surface; a first impurity region of a first conductivity type formed in an upper portion of the first semiconductor region; a second impurity region of a first conductivity type formed in a side portion of the first semiconductor region; and a gate insulating film formed so as to cover at least a side surface and an upper corner of a predetermined portion of the first semiconductor region. A radius of curvature r′ of an upper corner of a portion of the first semiconductor region located outside the gate insulating film is greater than a radius of curvature r of an upper corner of a portion of the first semiconductor region located under the gate insulating film and is less than or equal to 2r.

REFERENCES:
patent: 4912065 (1990-03-01), Mizuno et al.
patent: 7138305 (2006-11-01), Datta et al.
patent: 7800165 (2010-09-01), Sasaki et al.
patent: 2004/0036038 (2004-02-01), Okumura et al.
patent: 2005/0116218 (2005-06-01), Yang
patent: 2005/0280102 (2005-12-01), Oh et al.
patent: 2006/0084204 (2006-04-01), Yin et al.
patent: 2006/1015774 (2006-07-01), Okuno
patent: 2006/0220131 (2006-10-01), Kinoshita et al.
patent: 2007/0004117 (2007-01-01), Yagishita
patent: 2007/0082437 (2007-04-01), Cheng et al.
patent: 2007/0090408 (2007-04-01), Majumdar et al.
patent: 2007/0096196 (2007-05-01), Hofmann et al.
patent: 2007/0148836 (2007-06-01), Cheng et al.
patent: 2007/0155075 (2007-07-01), Kim et al.
patent: 2007/0158700 (2007-07-01), Koh et al.
patent: 2007/0184627 (2007-08-01), Cho et al.
patent: 2007/0210355 (2007-09-01), Izumida
patent: 2007/0235819 (2007-10-01), Yagishita
patent: 2008/0050897 (2008-02-01), Kottantharayil
patent: 2008/0179683 (2008-07-01), Sasaki et al.
patent: 2009/0181526 (2009-07-01), Okumura et al.
patent: 2009/0233383 (2009-09-01), Okumura et al.
patent: 2011/0033989 (2011-02-01), Choi et al.
patent: 2011/0037141 (2011-02-01), Kim et al.
patent: 01-295416 (1989-11-01), None
patent: 2006-196821 (2006-07-01), None
patent: WO 2006/064772 (2006-06-01), None
patent: WO 2006/098109 (2006-09-01), None
patent: WO 2006/106872 (2006-10-01), None
Khajetoorians, A. A., et al., “Dopant characterization of fin field-effect transistor structures using scanning capaciktance microscopy”, J. Appl. Phys, Feb. 9, 2007, vol. 101 No. 3, American Institute of Physics.
Lenoble, D., et al., “Enhanced performance of PMOS MUGFET via integration of conformal plasma-doped source/drain extensions”, Symposium on VLSI Technology Digest of Technical Papers, 2006, p. 212, IEEE.
United States Notice of Allowance issued in U.S. Appl. No. 12/512,617, mailed Apr. 18, 2011.
United States Notice of Allowance issued in U.S. Appl. No. 12/512,617 dated Apr. 18, 2011.

Affiliated with

Also associated with

Rating

Semiconductor device and method for producing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method for producing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for producing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4290317