Methods of forming layers of alpha-tantalum

Details Methods of forming layers of alpha-tantalum Methods of forming layers of alpha-tantalum

2009-06-26

2011-10-18

Lee, Hsien Ming (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S685000, C438S687000, C257SE21171, C257SE21168, C257SE21169

Reexamination Certificate

active

08039394

ABSTRACT:
A method of forming a layer of alpha-tantalum on a substrate including the steps of depositing a layer of titanium nitride on a substrate; and depositing a layer of alpha-tantalum on the layer of titanium nitride, wherein the deposition of the alpha-tantalum is carried out at temperatures below about 300° C.

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