Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2009-06-25

2011-11-01

Mandala, Victor A (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S382000, C257SE21619, C257SE21634, C438S199000, C438S938000, C438S300000

Reexamination Certificate

active

08049280

ABSTRACT:
A semiconductor device according to one embodiment includes: a gate electrode formed on a semiconductor substrate via a gate insulating film; Si:C layers formed on the semiconductor substrate in sides of the gate electrode; p-type source/drain regions formed in sides of the gate electrode in the semiconductor substrate, and a part of the p-type source/drain regions being formed in the Si:C layers; and silicide layers formed on the Si:C layers.

REFERENCES:
patent: 2004/0262694 (2004-12-01), Chidambaram
patent: 2008/0199999 (2008-08-01), Weijtmans et al.
Hiroshi Itokawa et al., “Source/Drain Engineering for MOSFETs with e-Si: C Technology”, Applied Surface Science, vol. 234, Issue 19. Jul. 30, 2008, 2 pages.
Tsung-Yang Liow, et al., “Strained N-Channel FinFETs with High-stress Nickel Silicide-Carbon Contacts and Integration with FUSI Metal Gate Technology”, Extended Abstracts of the 2007 International Conference on Solid State Devices and Materials, Tsukuba, 2007, pp. 872-873.

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