Semiconductor device

Details Semiconductor device Semiconductor device

Filed on

2005-10-31

Date issued

2011-11-01

Examiner

Pert, Evan (Department: 2826)

Patent Class

Active solid-state devices (e.g., transistors, solid-state diode

SubClass

Field effect device

SubSubClass

Having insulated electrode

Other Related Categories

C257S344000, C257S346000, C257S387000, C257S408000, C257SE29134, C257SE29135, C257SE29137

Type

Reexamination Certificate

Status

active

Patent number

08049275

Description

ABSTRACT:
There is provided a thin film transistor having improved reliability. A gate electrode includes a first gate electrode having a taper portion and a second gate electrode with a width narrower than the first gate electrode. A semiconductor layer is doped with phosphorus of a low concentration through the first gate electrode. In the semiconductor layer, two kinds of n−-type impurity regions are formed between a channel formation region and n+-type impurity regions. Some of the n−-type impurity regions overlap with a gate electrode, and the other n−-type impurity regions do not overlap with the gate electrode. Since the two kinds of n−-type impurity regions are formed, an off current can be reduced, and deterioration of characteristics can be suppressed.

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