Process for manufacturing a power device on a semiconductor...

Details Process for manufacturing a power device on a semiconductor... Process for manufacturing a power device on a semiconductor...

2008-02-12

2011-10-25

Lindsay, Jr., Walter L (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S138000, C257SE21427

Reexamination Certificate

active

08044462

ABSTRACT:
An electronic device includes a semiconductor substrate of a first conductivity type and a drain layer adjacent the semiconductor substrate and having a plurality of drains. The drain layer includes a first semiconductor layer of the first conductivity type adjacent the semiconductor substrate, and at least one second semiconductor layer of a second conductivity type adjacent the first semiconductor layer. Moreover, a plurality of first column regions of the first conductivity type extends through the at least one second semiconductor layer to contact the first semiconductor layer. A plurality of second column regions of the second conductivity type delimits the plurality of first column regions. Furthermore, a plurality of body regions of the second conductivity type are adjacent respective ones of the plurality of second column regions.

REFERENCES:
patent: 6703665 (2004-03-01), Nakamura
patent: 2003/0148559 (2003-08-01), Onishi et al.
patent: 0780897 (1997-06-01), None
patent: 0975024 (2000-01-01), None
patent: 1081768 (2001-03-01), None

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