Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2010-04-27
2011-10-11
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27112, C365S230060
Reexamination Certificate
active
08035147
ABSTRACT:
A high-speed and low-voltage DRAM memory cell capable of operating at 1 V or less and an array peripheral circuit are provided. A DRAM cell is comprised of a memory cell transistor and planar capacitor which utilize a FD-SOI MOST structure. Since there is no junction leakage current, loss of stored charge is eliminated, and the low-voltage operation can be realized. Further, a gate and a well in a cross-coupled type sense amplifier using FD-SOI MOSTs are connected. By this means, a threshold value dynamically changes and high-speed sensing operation can be realized.
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Translation of Office Action from Japanese Patent Application No. 2005-373757.
Itoh Kiyoo
Takemura Riichiro
Dickey Thomas L
Erdem Fazli
Hitachi , Ltd.
Miles & Stockbridge P.C.
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