Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2010-03-12
2011-10-11
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S591000, C438S769000, C438S783000, C257SE21300, C257SE21158, C257SE21576, C118S715000, C118S72300R, C118S692000
Reexamination Certificate
active
08034725
ABSTRACT:
This invention provides a high throughput PECVD process for depositing TEOS films in a multi-station sequential deposition chamber. The methods significantly reduce the number of particles in the TEOS films, thereby eliminating or minimizing small bin defects. The methods of the invention involve dedicating a first station for temperature soak while flowing purge gas. Stopping the flow of reactant gas and flowing the purge gas for station1eliminates TEOS condensation on a cold wafer surface and significantly reduces the number of defects in the film, particularly for short temperature soaks.
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Dhas Arul N.
Gerber Kevin
Henri Jon
Tang Xingyuan
Tian Jason
Baptiste Wilner Jean
Novellus Systems Inc.
Smith Matthew
Weaver Austin Villeneuve & Sampson LLP
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