Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-04-11
2011-10-25
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S128000, C438S131000, C438S600000, C438S618000, C438S622000, C438S687000, C438S688000, C257SE21117
Reexamination Certificate
active
08043966
ABSTRACT:
Disclosed are embodiments of a method that both monitors patterning integrity of etched openings (i.e., ensures that lithographically patterned and etched openings are complete) and forms on-chip conductive structures (e.g., contacts, interconnects, fuses, anti-fuses, capacitors, etc.) within such openings. The method embodiments incorporate an electro-deposition process to provide both the means by which pattern integrity of etched openings can be monitored and also the metallization required for the formation of conductive structures within the openings. Specifically, during the electro-deposition process, electron flow is established by applying a current to the back side of the semiconductor wafer, thus, eliminating the need for a seed layer. Electron flow through the wafer and into the electroplating solution is then monitored and used as an indicator of electroplating in the etched openings and, thereby, as an indicator that the openings are completely etched.
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Basker Veeraraghavan S.
Furukawa Toshiharu
Tonti William R.
Canale Anthony
Gibb I.P. Law Firm LLC
International Business Machines - Corporation
Lee Kyoung
Richards N Drew
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