Method and appartus for detection of mechanical defects in...

Details Method and appartus for detection of mechanical defects in... Method and appartus for detection of mechanical defects in...

2007-06-19

2011-10-18

Tran, Binh X (Department: 1713)

Etching a substrate: processes

Etching to produce porous or perforated article

C216S060000, C216S084000, C216S085000, C117S014000, C117S038000

Reexamination Certificate

active

08038895

ABSTRACT:
A method for detection of mechanical defects in a semiconductor ingot section which has at least one planar surface, and a thickness at right angles to this surface of 1 cm to 100 cm, involves scanning the planar surface by at least one ultrasound head which is coupled via a liquid coupling medium to the planar surface and, at each measurement point (x,y) producing at least one ultrasound pulse which is directed at the planar surface of the ingot section, recording the ultrasound-pulse echo as a function of time, such that an echo from the planar surface, an echo from a surface opposite the planar surface, and further echoes are detected, with the positions (xp, yp, zp) of mechanical defects in the ingot section being determined from the further echoes.

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English Derwent Abstract AN 2006-783817 corresponding to DE 10 2006 005 448 A1.

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