Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2009-12-02
2011-10-04
Weiss, Howard (Department: 2814)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21585, C257SE21590
Reexamination Certificate
active
08030211
ABSTRACT:
A method for forming a semiconductor device comprises forming first and second bit lines at different levels. Forming the bit lines at different levels increases processing latitude, particularly the spacing between the bit lines which, with conventional processes, may strain photolithographic limits. A semiconductor device formed using the method, and an electronic system comprising the semiconductor device, are also described.
REFERENCES:
patent: 5680364 (1997-10-01), Lee
patent: 5757710 (1998-05-01), Li et al.
patent: 5835396 (1998-11-01), Zhang
patent: 6310800 (2001-10-01), Takahashi
patent: 6387759 (2002-05-01), Park et al.
patent: 6654281 (2003-11-01), Georgakos et al.
patent: 6853023 (2005-02-01), Goebel et al.
patent: 6873007 (2005-03-01), Sugita et al.
patent: 7262456 (2007-08-01), Kakoschke et al.
patent: 2003/0085421 (2003-05-01), Takeuchi et al.
patent: 2004/0037113 (2004-02-01), Ooishi
patent: 2004/0051133 (2004-03-01), Sugita et al.
patent: 2004/0079988 (2004-04-01), Harari
patent: 2004/0108512 (2004-06-01), Iwata et al.
patent: 01/47019 (2001-06-01), None
patent: 2004/102666 (2004-11-01), None
Office Action dated Aug. 11, 2010, in related Korean Patent Application No. 10-2008-7027010 (w/ English translation), 5 pages.
Office Action dated Jul. 14, 2010, in related Chinese Patent Application No. 200780016789.8 (w/ English translation), 7 pages.
Office Action and Search Report dated Aug. 20, 2010, in related Taiwanese Patent Application No. 096113033 (w/ English translation), 14 pages.
Search Report and Written Opinion for international application No. PCT/US2007/009282, 14 pages, Dec. 3, 2007.
First Office Action issued in corresponding Chinese Application on Feb. 25, 2010, application No. 200780016789.8, application filed Apr. 13, 2007 and published May 27, 2009, CN 101443092A.
Office Action dated Aug. 20, 2010, in related Taiwan Patent Application No. 096113033 (w/English translation), 14 pages.
Micro)n Technology, Inc.
Weiss Howard
LandOfFree
Methods for forming bit line contacts and bit lines during... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods for forming bit line contacts and bit lines during..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for forming bit line contacts and bit lines during... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4283813