Photodiode and photo IC using same

Details Photodiode and photo IC using same Photodiode and photo IC using same

2008-02-26

2011-10-18

Parker, Kenneth (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S290000, C257S461000, C257S463000, C257SE31076

Reexamination Certificate

active

08039917

ABSTRACT:
A photodiode includes a first silicon semiconductor layer formed over an insulating layer, a second silicon semiconductor layer formed over the insulating layer, having a thickness ranging from greater than or equal to 3 nm to less than or equal to 36 nm, a low-concentration diffusion layer which is formed in the second silicon semiconductor layer and in which an impurity of either one of a P type and an N type is diffused in a low concentration, a P-type high-concentration diffusion layer which is formed in the first silicon semiconductor layer and in which the P-type impurity is diffused in a high concentration, and an N-type high-concentration diffusion layer which is opposite to the P-type high-concentration diffusion layer with the low-concentration diffusion layer interposed therebetween and in which the N-type impurity is diffused in a high concentration.

REFERENCES:
patent: 6545333 (2003-04-01), Ketchen et al.
patent: 7419844 (2008-09-01), Lee et al.
patent: 2006/0118918 (2006-06-01), Waite et al.
patent: 2007/0114582 (2007-05-01), Shiu et al.
patent: 2007/0278574 (2007-12-01), Hsu et al.
patent: 07162024 (1995-06-01), None
patent: 2002314117 (2002-10-01), None
A. Afzalian et al., “Physical Modeling and Design of Thin-Film SOI Lateral PIN Photodiodes”, IEEE Transactions on Electron Device, vol. 52, No. 6, Jun. 2005, pp. 1116-1122.

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