Solid-state image sensor

Details Solid-state image sensor Solid-state image sensor

2010-05-04

2011-10-04

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S291000, C257S294000, C257S431000, C257SE21334

Reexamination Certificate

active

08030693

ABSTRACT:
There is provide a divided exposure technology capable of restraining deterioration in the performance of a solid-state image sensor. A photoresist is formed over a semiconductor substrate and subjected to divided exposure. A dividing line for divided exposure is located at least over a region of a semiconductor substrate in which an active region in which a pixel is to be formed is defined. The photoresist is then developed and patterned. By utilizing the patterned photoresist, an element isolation structure for defining the active region in the semiconductor substrate is formed in the semiconductor substrate.

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