Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Thinning of semiconductor substrate
Reexamination Certificate
2009-04-01
2011-11-22
Sarkar, Asok (Department: 2891)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Thinning of semiconductor substrate
C257SE21237, C438S959000
Reexamination Certificate
active
08062958
ABSTRACT:
Methods of forming microelectronic device wafers include fabricating a plurality of semiconductor dies at an active side of a semiconductor wafer, depositing a mask on the semiconductor wafer, removing a central portion of the mask and the semiconductor wafer, and etching. The semiconductor wafer has an outer perimeter edge and a backside that is spaced from the active side by a first thickness. The mask is deposited on the backside of the semiconductor wafer and has a face that is spaced from the backside by a mask thickness. The thinned portion has a thinned surface that is spaced from the active side by a second thickness that is less than the first thickness, and the thinned surface is etched.
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Grigg Ford B.
Schrock Ed A.
Wood Alan G.
Micro)n Technology, Inc.
Perkins Coie LLP
Sarkar Asok
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