Microelectronic device wafers and methods of manufacturing

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Thinning of semiconductor substrate

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257SE21237, C438S959000

Reexamination Certificate

active

08062958

ABSTRACT:
Methods of forming microelectronic device wafers include fabricating a plurality of semiconductor dies at an active side of a semiconductor wafer, depositing a mask on the semiconductor wafer, removing a central portion of the mask and the semiconductor wafer, and etching. The semiconductor wafer has an outer perimeter edge and a backside that is spaced from the active side by a first thickness. The mask is deposited on the backside of the semiconductor wafer and has a face that is spaced from the backside by a mask thickness. The thinned portion has a thinned surface that is spaced from the active side by a second thickness that is less than the first thickness, and the thinned surface is etched.

REFERENCES:
patent: 5674785 (1997-10-01), Akram et al.
patent: 5739585 (1998-04-01), Akram et al.
patent: 7098152 (2006-08-01), Moore
patent: 7169691 (2007-01-01), Doan
patent: 7332413 (2008-02-01), Kirby
patent: 7507638 (2009-03-01), Mancini et al.
patent: 2003/0020062 (2003-01-01), Faris
patent: 2003/0143819 (2003-07-01), Hedler et al.
patent: 2006/0003255 (2006-01-01), Wood et al.
patent: 2008/0014679 (2008-01-01), Shen et al.
patent: 2008/0242052 (2008-10-01), Feng et al.
Taiko Process, Disco Corporation, retrieved from the Internet on Feb. 23, 2009, <http:www.disco.co.jp/eg/solution/library/taiko.html>.
Kallender, P., “Fujitsu sculpts ultra-thin wafers for multichip packs,” EE Times, Dec. 4, 2001.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Microelectronic device wafers and methods of manufacturing does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Microelectronic device wafers and methods of manufacturing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Microelectronic device wafers and methods of manufacturing will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4281304

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.