Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2009-02-24

2011-11-08

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S330000, C257S334000, C257S401000, C257SE29258

Reexamination Certificate

active

08053820

ABSTRACT:
A semiconductor device has a first conductivity type semiconductor substrate, a second conductivity type buried layer formed in a predetermined region on the semiconductor substrate, and a first conductivity type epitaxial growth layer formed on the buried layer and the semiconductor substrate. Trenches are formed in the epitaxial growth layer and arranged side by side in a gate width direction of a transistor to be formed. An entire bottom surface of each trench is entirely surrounded by and disposed in contact with the buried layer. A gate electrode is formed inside and on a top surface of each of the trenches and on a surface of the epitaxial growth layer adjacent to each of the trenches via a gate insulating film. A second conductivity type high concentration source diffusion layer is formed on one side of the gate electrode. A second conductivity type high concentration drain diffusion layer formed on another side of the gate electrode.

REFERENCES:
patent: 2004/0248371 (2004-12-01), Wang
patent: 2006/0001085 (2006-01-01), Risaki
patent: 05110083 (1993-04-01), None

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