Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-04-02
2011-11-22
Richards, N Drew (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S295000, C257S315000, C257S317000, C257S325000
Reexamination Certificate
active
08063435
ABSTRACT:
A semiconductor memory in which a gate insulating film (tunnel insulating film) in a memory cell provides higher operational reliability. The semiconductor memory includes an insulating film3between a silicon substrate1and a gate electrode4. The insulating film3is composed of a silicon oxide film3f, a silicon nitride film3dand a silicon oxide film3b, stacked in this order between the silicon substrate and the gate electrode from the side of the silicon substrate1. There are provided hydrogen occluding films3a,3cand3eon an interface between the silicon oxide film3fand the silicon nitride film3d, on an interface between the silicon nitride film3dand the silicon oxide film3band on an interface between the silicon oxide film3band the gate electrode4(FIGS.1A and1B).
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Lee Kyoung
Renesas Electronics Corporation
Richards N Drew
Young & Thompson
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