Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2010-08-04
2011-11-08
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S150000, C438S157000, C438S164000, C257SE21199, C257SE21411, C257SE21622
Reexamination Certificate
active
08053292
ABSTRACT:
The disclosure concerns a method of manufacturing a semiconductor device including forming a plurality of fins made of a semiconductor material on an insulating layer; forming a gate insulating film on side surfaces of the plurality of fins; and forming a gate electrode on the gate insulating film in such a manner that a compressive stress is applied to a side surface of a first fin which is used in an NMOSFET among the plurality of fins in a direction perpendicular to the side surface and a tensile stress is applied to a side surface of a second fin which is used in a PMOSFET among the plurality of fins in a direction perpendicular to the side surface.
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Inaba Satoshi
Kaneko Akio
Yagishita Atsushi
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Thomas Toniae
Wilczewski Mary
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