Patterning method of semiconductor device

Details Patterning method of semiconductor device Patterning method of semiconductor device

2008-10-22

2011-11-15

Duda, Kathleen (Department: 1722)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S005000

Reexamination Certificate

active

08057987

ABSTRACT:
The invention relates to a patterning method of a semiconductor device. In an aspect of the invention, the method may include forming a target etch layer on a semiconductor substrate, forming a photoresist film on the target etch layer, forming photoresist patterns using exposure and development processes employing an exposure mask wherein exposure patterns, each having inclined top corners, are formed, and patterning the target etch layer using an etch process employing the photoresist patterns.

REFERENCES:
patent: 6162567 (2000-12-01), Watanabe
patent: 2002/0097356 (2002-07-01), Kawase et al.
patent: 2003/0091938 (2003-05-01), Fairbairn et al.
patent: 2006/0240359 (2006-10-01), Liu
patent: 2009-008933 (2009-01-01), None
patent: 10-2008-0012011 (2008-02-01), None

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