Mixture for doping semiconductors

Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into...

Reexamination Certificate

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C438S558000, C257S607000, C106S287170, C106S287180, C106S287290

Reexamination Certificate

active

08043946

ABSTRACT:
A doping mixture for coating semiconductor substrates which are then subjected to a high temperature treatment to form a doped layer includes at least one p- or n-dopant, water and a mixture of two or more surfactants. At least one of the surfactants is nonionic. Also, provided are a method for producing such a doping mixture and the use thereof.

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