Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2009-09-21

2011-10-11

Le, Vu (Department: 2824)

Static information storage and retrieval

Systems using particular element

Resistive

C365S149000, C365S163000, C365S157000, C365S171000, C365S173000

Reexamination Certificate

active

08036017

ABSTRACT:
An inexpensive nonvolatile memory having high performance which makes random write and readout possible an unlimited number of times is provided. A unit memory cell is formed of a MISFET having a channel body that is electrically isolated from a semiconductor substrate and a resistance change element having a two-terminal structure with one end electrically connected to a drain of the MISFET. The MISFET functions as a volatile memory element, and the resistance change element functions as a nonvolatile memory element, so that information stored in the MISFET is copied to the resistance change element before the power is turned OFF and information stored in the resistance change element is transferred to the MISFET when the power is turned ON, and thus, the MISFET is used as a volatile memory which makes random write and readout possible.

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