Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-05-30
2011-10-04
Louie, Wai Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S294000, C257S432000, C257S435000, C257S232000, C257S233000, C257S223000, C257S258000
Reexamination Certificate
active
08030692
ABSTRACT:
A solid state image sensing device in which many pixels are disposed in a matrix on a two-dimensional plane comprises a plurality of light receiving devices disposed in such a way that a center interval may periodically change in a column direction and/or a row direction, and a plurality of micro-lenses, for collecting an incident light of each light receiving device, wherein a center interval periodically changes in accordance with the periodic change of the center interval of the light receiving device.
REFERENCES:
patent: 5661608 (1997-08-01), Barbier et al.
patent: 6970293 (2005-11-01), Natori
patent: 2007/0222885 (2007-09-01), Katsuno et al.
patent: 2001-160973 (2001-06-01), None
patent: 2001-298177 (2001-10-01), None
patent: 2004-296590 (2004-10-01), None
Machine translation of JP2001-298177 has been attached.
Daiku Hiroshi
Inoue Tadao
Fujitsu Patent Center
Fujitsu Semiconductor Limited
Jahan Bilkis
Louie Wai Sing
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