Sensing delay circuit and semiconductor memory device using...

Details Sensing delay circuit and semiconductor memory device using... Sensing delay circuit and semiconductor memory device using...

2008-08-19

2011-11-01

Dinh, Son (Department: 2824)

Static information storage and retrieval

Read/write circuit

Signals

C365S189050, C365S201000, C365S189080

Reexamination Certificate

active

08050120

ABSTRACT:
A sensing delay circuit includes a logic element which responds to a test mode signal to transfer a start signal, a delay unit which is configured of a plurality of inverters having MOS transistors with controlled threshold voltage, and receives external voltage as bulk voltage and delays an output signal from the logic element by a predetermined period, and a buffer which responds to an output signal from the delay unit to buffer the output signal from the logic element and output it.

REFERENCES:
patent: 6577546 (2003-06-01), Fujiwara et al.
patent: 7154808 (2006-12-01), Shim
patent: 2006/0209606 (2006-09-01), Rajwani et al.
patent: H05-101658 (1993-04-01), None
patent: 10-2004-0093789 (2004-11-01), None

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