Resistance change memory device

Details Resistance change memory device Resistance change memory device

2008-11-07

2011-10-04

Le, Vu (Department: 2824)

Static information storage and retrieval

Systems using particular element

Resistive

C365S163000

Reexamination Certificate

active

08031508

ABSTRACT:
A resistance change memory device includes: a memory cell array with memory cells arranged therein, the memory cell having a variable resistance element for storing a rewritable resistance value; a reference cell formed of the same memory cells as those set in a high resistance state in the memory cell array, the reference cell being trimmed with selection of the number of parallel-connected memory cells to have a reference current value used for detecting data in the memory cell array; and a sense amplifier configured to compare a cell current value of a memory cell selected in the memory cell array with the reference current value of the reference cell.

REFERENCES:
patent: 5386388 (1995-01-01), Atwood et al.
patent: 5444656 (1995-08-01), Bauer et al.
patent: 6055187 (2000-04-01), Dallabora et al.
patent: 6778426 (2004-08-01), Hosotani
patent: 7423898 (2008-09-01), Tanizaki et al.
patent: 2003/0231525 (2003-12-01), Mine
patent: 2006/0092689 (2006-05-01), Braun et al.
U.S. Appl. No. 12/668,750, filed Jan. 12, 2010, Toda, et al.
Y. Hosoi, et al., “High Speed Unipolar Switching Resistance RAM (RRAM) Technology”, IEEE Int. Elec. Dev. Meeting, Technical Dig. 2006, 4 pages.

Affiliated with

Also associated with

Rating

Resistance change memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Resistance change memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Resistance change memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4271853