Method of forming a bond pad

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

C438S618000, C438S638000, C438S672000, C438S673000

Reexamination Certificate

active

08043961

ABSTRACT:
A front-end method of fabricating nickel plated caps over copper bond pads used in a memory device. The method provides protection of the bond pads from an oxidizing atmosphere without exposing sensitive structures in the memory device to the copper during fabrication.

REFERENCES:
patent: 6424036 (2002-07-01), Okada
patent: 6825564 (2004-11-01), Gleason et al.
patent: 6946347 (2005-09-01), Gilton
patent: 7465653 (2008-12-01), Huang et al.
patent: 2004/0036137 (2004-02-01), Gleason et al.
patent: 2004/0232551 (2004-11-01), Moore et al.
patent: 2005/0020069 (2005-01-01), Gleason et al.
patent: 2005/0194255 (2005-09-01), Tiwari
patent: 2006/0022352 (2006-02-01), Moore et al.
patent: 2008/0233733 (2008-09-01), Lin

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