Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2010-08-09
2011-10-25
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S618000, C438S638000, C438S672000, C438S673000
Reexamination Certificate
active
08043961
ABSTRACT:
A front-end method of fabricating nickel plated caps over copper bond pads used in a memory device. The method provides protection of the bond pads from an oxidizing atmosphere without exposing sensitive structures in the memory device to the copper during fabrication.
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Brooks Joseph F.
Moore John
Dickstein & Shapiro LLP
Le Dung A.
Micro)n Technology, Inc.
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