Thin-film transistor and method of manufacturing the same

Details Thin-film transistor and method of manufacturing the same Thin-film transistor and method of manufacturing the same

2009-03-06

2011-11-15

Dickey, Thomas L (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

C257SE33053, C257SE21414, C257SE29288, C438S149000

Reexamination Certificate

active

08058649

ABSTRACT:
In one embodiment, a thin-film transistor (TFT) includes a gate electrode, a semiconductor pattern, first and second electrodes and a protective layer. The semiconductor pattern is formed on the gate electrode, and includes a first semiconductor layer deposited at a first deposition speed and a second semiconductor layer deposited at a second deposition speed faster than the first deposition speed. The first and second electrodes are spaced apart from each other on the semiconductor pattern. The protective layer is formed on the semiconductor pattern to cover the first and second electrodes, and makes contact with a channel region of the first semiconductor layer to form an interface with the first semiconductor layer. Thus, electrical characteristics of the TFT may be improved.

REFERENCES:
patent: 5136358 (1992-08-01), Sakai et al.
patent: 5441768 (1995-08-01), Law et al.
patent: 5834345 (1998-11-01), Shimizu
patent: 6545293 (2003-04-01), Wong

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